to-220f plastic-encapsulate transistors KTD2058 transistor ( npn ) features low collector saturation voltage v ce(sat) = 1. 0v(max) . maximum ratings * ( t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 7 v i c collector current -continuous 3 a p c collector power dissipation 2 w t j junction temperature 150 t stg storage temperature range -55 ~+ 150 * these ratings are limiting values above which the servic eability of any semic onductor device may be impaired. electricalcharacteristics(ta=25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo ic=100a, i e =0 60 v collector-emitter breakdown voltage v (br)ceo ic=50ma, i b =0 60 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 7 v collector cut-off current i cbo v cb =60v, i e =0 100 a emitter cut-off current i ebo v eb =7v, i c =0 100 a dc current gain h fe(1) v ce =5v, i c =0.5a 60 200 collector-emitter saturation voltage v ce(sat) i c =2a, i b =0.2a 1 v base-emitter voltage v be(on) v ce =5v, i c =0.5a 1 v transition frequency f t v ce =5v, i c =0.5a 3 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 35 pf turn-on time t on 0.65 storage time t stg 1.3 switching time fall time t f 0.65 us to-220 f 1. base 2. collectot r 3. emitter classification of h fe(1) rank o y range 60-120 100-200 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,dec,2012
|
